symbol parameters rating units absolute maximum ratings: v ceo collector-emitter voltage 35 v v ebo emitter-base voltage 3.5 v i c collector current (instantaneous) 16.5 a t j junction temperature 250 o c t stg storage temperature -65 to 200 o c v cbo collector-base voltage 50 v symbol parameters & conditions unit min. typ. max. v ce =35v, i c = 16.5 a, class c c ob output capacitance: f = 1 mhz, i e = 0 pf 4.5 bipolarics, inc part number BMT0912B150 silicon microwave power transistor product data sheet jc thermal resistance 0.57 c/w features: common base, class c package configuration high output power 150 w @ 0.9 to 1.2 ghz high gain bandwidth product f t = 6.0 ghz @ i c = 16.5 a high gain g pe = 7.5 db to 8.2 db high reliability gold metallization nitride passivation diffused ballast resistors beo packaging performance data: electrical characteristics (t a = 25 o c) p 1db power output at 1 db compression: f = 1.4 ghz w 150 collector efficiency class c % 50 h fe forward current transfer ratio: v cb = 5v, i c = 100 ma 10 60 100 p t total power dissipation w 300 ? built-in matching network for broadband operation
bipolarics, inc. part number BMT0912B150 page 2 silicon microwave power transistor
bipolarics, inc. part number BMT0912B150 page3 silicon microwave power transistor
bipolarics, inc. part number BMT0912B150 page 4 silicon microwave power transistor bipolarics, inc. 602 charcot ave. san jose, ca 95131 phone: (408) 456-0430 fax: (408 ) 456-0431 lead 1 2 3 4 25 package emitter base collector base 50 package: 0.500" x 0.400" 2 lead flange
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